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| IT2008K 10 MHz - 20 GHz High Power Amplifier Description The IT2008K is a broadband traveling wave amplifier designed for high output power applications where low-frequency extension capabilities are also required. The IT2008K provides saturated output power greater than 29 dBm up to 14 GHz and greater than 25 dBm up to 20 GHz. Average gain is 9.5 dB to 20 GHz. DC power consumption as low as 3.15 W is obtained by biasing for best output power and good linearity. Input and output ports are DC coupled. Frequency range: 2 GHz - 20 GHz with low-frequency extension to 10 MHz P3dB (2 GHz - 14 GHz): 29 dBm P3dB (14 GHz - 20 GHz): 27 dBm Gain: 9.5 dB DC power consumption: 3.15 W DC bias conditions: 9 V at 350 mA "K" type ceramic flange package www..com Features Absolute Maximum Ratings Symbol VDD VGG IDD IGG Pin Pdiss_DC Tch Tm Tst Parameters/conditions Positive supply voltage Negative supply voltage Positive supply current Negative supply current RF input power DC power dissipation (no RF) Operating channel temperature Mounting temperature (30 s) Storage temperature Min. -2 Max. 11 0 900 1.8 25 5 150 320 150 Units V V mA mA dBm W C C C -65 Electrical Characteristics (at 25 C) 50 ohm system VDD = +9 V Quiescent current (IDDQ) = 350 mA Symbol BW S21 S11 S22 S12 P3dB P1dB Parameters/conditions Frequency range Small signal gain Gain flatness Input return loss Output return loss Isolation Output power at 3 dB gain compression 2 - 14 GHz 14 - 20 GHz Output power at1 dB gain compression 2 - 14 GHz 14 - 20 GHz Min. 2 7.5 Typ. 9.5 -12 -12 Max. 20 +/-2 -8 -8 25 27.5 25.5 26.5 24.5 29 27 28 26 Units GHz dB dB dB dB dB dBm dBm dBm dBm www.iterrac.com This is a Production data sheet. See "Product Status Definitions" on Web site or catalog for product development status. August 21 2006 Doc. 4086 Rev 1.1 1 iTerra Communications 2400 Geng Road, Ste. 100, Palo Alto, CA 94303 Phone (650) 424-1937, Fax (650) 424-1938 IT2008K 10 MHz - 20 GHz High Power Amplifier Thermal Characteristics Symbol Rth_jb Parameters/conditions Rth_jb (o C/W) Tch (o C) Thermal resistance junction-Backside of die 10.6 103 No RF: DC bias VDD = 9 V, IDQ = 350 mA , PDC = 3.15 W Tbase = 70 C Thermal resistance junction-Backside of die RF applied: Ouput P3dB = 29 dBm , VDD = 9 V, PDISS = 4.4 W 10.6 117 Tbase = 70 C MTFF (Hours) >> +1E7 Rth_jb >> +1E7 www..com Device Diagram Package Style "K" www.iterrac.com This is a Production data sheet. See "Product Status Definitions" on Web site or catalog for product development status. August 21 2006 Doc. 4086 Rev 1.1 2 iTerra Communications 2400 Geng Road, Ste. 100, Palo Alto, CA 94303 Phone (650) 424-1937, Fax (650) 424-1938 IT2008K 10 MHz - 20 GHz High Power Amplifier Recommended Assembly Diagram for 2 GHz to 20 GHz Applications The bypass capacitor on the VDD www..com bias tee must be 100 F RFin and DC blocking capacitor RFout and VDD through a bias tee VGG 0.1 F Pinouts: 1: RFinput 2: NC 3: NC 4: NC 5: NC 6: RFoutput and Vdd 7: NC 8: NC 9: Vgg 10: NC www.iterrac.com This is a Production data sheet. See "Product Status Definitions" on Web site or catalog for product development status. August 21 2006 Doc. 4086 Rev 1.1 3 iTerra Communications 2400 Geng Road, Ste. 100, Palo Alto, CA 94303 Phone (650) 424-1937, Fax (650) 424-1938 IT2008K 10 MHz - 20 GHz High Power Amplifier Recommended Assembly Diagram for 10 MHz to 20 GHz Applications www..com 0.1 F The bypass capacitor on the VDD bias tee must be 100 F RFin and DC blocking capacitor VGG 0.1 F RFout and VDD through a bias tee* 0.1 F Pinouts: 1: RFinput 2: NC 3: NC 4: Low frequency extension 5: NC 6: RFoutput and Vdd 7: NC 8: Low frequency extension 9: Vgg 10: NC www.iterrac.com This is a Production data sheet. See "Product Status Definitions" on Web site or catalog for product development status. August 21 2006 Doc. 4086 Rev 1.1 4 iTerra Communications 2400 Geng Road, Ste. 100, Palo Alto, CA 94303 Phone (650) 424-1937, Fax (650) 424-1938 IT2008K 10 MHz - 20 GHz High Power Amplifier Performance Data At 25o C 14 13 12 11 10 9 8 7 6 5 4 3 2 1 0 2 4 6 8 10 12 14 16 18 20 Freq (GHz) Gain VDD = 9 V, IDDQ = 350 mA. 4 0 -4 -8 -12 -16 -20 -24 -28 -32 -36 -40 -44 -48 2 4 Output Return Loss VDD = 9 V, IDDQ = 350 mA. S21 (dB) www..com S22 (dB) 6 8 10 12 14 16 18 20 Freq (GHz) Gain vs. VDD IDDQ = 350 mA. 14 13 12 11 10 9 8 7 6 5 4 3 2 1 0 2 4 6 8 10 12 14 Freq (GHz) 4 0 -4 -8 -12 -16 -20 -24 -28 -32 -36 -40 -44 -48 2 4 Input Return Loss VDD = 9 V, IDDQ = 350 mA. S21 (dB) VDD = 9V VDD = 8V 16 18 20 S11 (dB) 6 8 10 12 14 16 18 20 Freq (GHz) Gain vs. Temperature VDD = 9 V. 14 13 12 11 10 9 8 7 6 5 4 3 2 1 0 2 4 6 8 10 12 14 Freq (GHz) 0 -5 -10 -15 -20 -25 -30 -35 -40 -45 -50 -55 -60 2 4 Isolation VDD = 9 V, IDDQ = 350 mA. S21 (dB) T=0C T = 25 C T = 50 C T = 70 C 16 18 20 S12 (dB) 6 8 10 12 14 Freq (GHz) 16 18 20 www.iterrac.com This is a Production data sheet. See "Product Status Definitions" on Web site or catalog for product development status. August 21 2006 Doc. 4086 Rev 1.1 5 iTerra Communications 2400 Geng Road, Ste. 100, Palo Alto, CA 94303 Phone (650) 424-1937, Fax (650) 424-1938 IT2008K 10 MHz - 20 GHz High Power Amplifier Performance Data At 25o C 36 34 32 30 28 26 24 22 20 18 16 14 2 4 6 8 10 12 14 Freq (GHz) 16 18 20 Output P3dB VDD = 9 V, IDDQ = 350 mA. 34 32 30 28 26 24 22 20 18 16 14 2 4 6 Output P1dB VDD = 9 V, IDDQ = 350 mA. www..com P 3dB (dBm) P1dB (dBm) 8 10 12 14 16 18 20 Freq (GHz) Output P3dB vs. VDD IDDQ = 350 mA. 36 34 32 30 28 26 24 22 20 18 16 14 2 4 6 8 10 12 14 Freq (GHz) Output P1dB vs. VDD IDDQ = 350 mA. 34 32 30 28 26 24 22 20 18 16 14 2 4 6 8 10 12 14 Freq (GHz) P 1dB (dBm) P 3dB (dBm) VDD = 9V VDD = 8V VDD = 9V VDD = 8V 16 18 20 16 18 20 Output IP3 VDD = 9 V, IDDQ = 350 mA. 44 40 36 OIP3 (dBm) 32 28 24 20 16 12 2 4 6 8 10 12 14 16 18 20 Freq (GHz) www.iterrac.com This is a Production data sheet. See "Product Status Definitions" on Web site or catalog for product development status. August 21 2006 Doc. 4086 Rev 1.1 6 iTerra Communications 2400 Geng Road, Ste. 100, Palo Alto, CA 94303 Phone (650) 424-1937, Fax (650) 424-1938 IT2008K 10 MHz - 20 GHz High Power Amplifier Recommended Procedure for Biasing and Operation CAUTION: LOSS OF GATE VOLTAGE (VGG) WHILE CORRESPONDING DRAIN VOLTAGE (VDD) IS PRESENT CAN DAMAGE THE AMPLIFIER. The following procedure must be considered to properly test the amplifier. www..com The IT2008K amplifier is biased with a positive drain supply (VDD) and one negative gate supply (VGG). The recommended bias conditions for the iT2008 are VDD = 9.0 V, IDDQ = 350 mA. To achieve this drain current level, VGG is typically biased between -0.7 V and -0.9 V. Drain bias VDD MUST be applied through lead 6. An external DC blocking capacitor is needed at the RFin (1) lead. The gate voltage (VGG) MUST be applied prior to the drain voltage (VDD) during power-up and removed after the drain voltage is removed during the power-down. CAUTION: LOSS OF GATE VOLTAGE (VGG) WHILE CORRESPONDING DRAIN VOLTAGE (VDD) IS PRESENT CAN DAMAGE THE AMPLIFIER. Biasing sequence: 1. Apply -2 V to VGG. 2. Apply 0 V to VDD. 3. Adjust VDD to 4.5 V. 4. Adjust VGG to -1 V. 5. Adjust VDD to 9 V. 6. Adjust VGG to attain IDD = 350 mA total current. (VGG , typically biased between -0.7 V and -0.9 V). Low-Frequency An external DC blocking capacitor is needed at the RFin (1) lead. 0.1 F capacitors on Operation leads (4,8) are necessary for low frequency extension. An external low-loss bias tee at the RFout (6) must be used for applications as low as 10 MHz. It is recommended that the drain bias tee be decoupled with a large capacitance (100 F) for low frequency stability. Application Information CAUTION: THIS IS AN ESD SENSITIVE DEVICE These devices should be handled with care and stored in a dry nitrogen environment. These are ESD sensitive devices and should be handled with appropriate caution, including the use of wristgrounding straps. All die attach and wire/ribbon bond equipment must be grounded to prevent static discharges through the device. www.iterrac.com This is a Production data sheet. See "Product Status Definitions" on Web site or catalog for product development status. August 21 2006 Doc. 4086 Rev 1.1 7 iTerra Communications 2400 Geng Road, Ste. 100, Palo Alto, CA 94303 Phone (650) 424-1937, Fax (650) 424-1938 |
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